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Solids in which the atoms, ions, or molecules are arranged in a definite repeating pattern are known as crystalline solids. Metals and ionic compounds typically form ordered, crystalline solids. A crystalline solid has a precise melting temperature because each atom or molecule of the same type is held in place with the same forces or energy. Amorphous solids or non-crystalline solids (or, sometimes, glasses) which lack an ordered internal structure and are randomly arranged. Substances that...
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Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
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Dislocation mobility in a quantum crystal: the case of solid 4He.

Renato Pessoa1, S A Vitiello, Maurice de Koning

  • 1Instituto de Física Gleb Wataghin, Caixa Postal 6165, Universidade Estadual de Campinas - UNICAMP 13083-970, Campinas, SP, Brazil. rpessoa@ifi.unicamp.br

Physical Review Letters
|April 7, 2010
PubMed
Summary

We studied dislocations in hexagonal close-packed (hcp) helium-4 (4He) crystals. Our findings reveal dislocation core structures and highlight intrinsic lattice resistance as key to their mobility, impacting crystal behavior.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Quantum crystals

Background:

  • Helium-4 (4He) exhibits unique quantum behavior at low temperatures.
  • Understanding dislocation dynamics is crucial for solid-state properties.
  • Hexagonal close-packed (hcp) structures present complex dislocation behavior.

Purpose of the Study:

  • To investigate the structure and mobility of dislocations in hcp 4He crystals.
  • To characterize the elastic constants of hcp 4He.
  • To elucidate the factors governing dislocation movement and their macroscopic implications.

Main Methods:

  • First-principles calculations.
  • Elastic constant determination.
  • Dislocation core structure analysis.

Main Results:

  • Fully characterized the five elastic constants of hcp 4He.
  • Dislocation cores on the basal plane show a tendency to dissociate into partial dislocations.
  • Intrinsic lattice resistance significantly influences dislocation mobility.

Conclusions:

  • Dislocation mobility in hcp 4He is governed by core structure and lattice resistance.
  • Results provide new insights into the link between microscopic dislocation behavior and macroscopic properties of crystalline 4He.
  • This work advances the understanding of quantum crystal mechanics.