Related Experiment Video
Updated: Jun 14, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Surface induced asymmetry of acceptor wave functions
C Celebi1, J K Garleff, A Yu Silov
1COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, NL-5600 MB Eindhoven, The Netherlands.
Abstract:
Measurements of the local density of states of individual acceptors in III-V semiconductors show that the symmetry of the acceptor states strongly depends on the depth of the atom below a (110) surface. Tight-binding calculations performed for a uniformly strained bulk material demonstrate that strain induced by the surface relaxation is responsible for the observed depth-dependent symmetry breaking of acceptor wave functions. As this effect is strongest for weakly bound acceptors, it explains within a unified approach the commonly observed triangular shapes of shallow acceptors and the crosslike shapes of deeply bound acceptor states in III-V materials.
More Related Videos
Related Concept Videos
Molecular Orbital Theory II
Molecular Orbital Theory I
Hybridization of Atomic Orbitals I
π Molecular Orbitals of the Allyl Cation and Anion
Valence Bond Theory and Hybridized Orbitals
A σ bond (single bond in a Lewis structure) is a covalent bond in which the electron density is...
IR Spectrum Peak Splitting: Symmetric vs Asymmetric Vibrations

