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Updated: Jun 14, 2026

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition
Published on: December 21, 2015
Influence of phase transformation on stress evolution during growth of metal thin films on silicon
A Fillon1, G Abadias, A Michel
1Institut P', CNRS-Université de Poitiers-ENSMA, Département Physique et Mécanique des Matériaux, SP2MI-Téléport 2, F86962 Futuroscope-Chasseneuil cedex, France.
Abstract:
In situ stress measurements during two-dimensional growth of low mobility metal films on amorphous Si were used to demonstrate the impact of interface reactivity and phase transformation on stress evolution. Using Mo1-xSix films as examples, the results show that the tensile stress rise, which develops after the film has become crystalline, is correlated with an increase in lateral grain size. The origin of the tensile stress is attributed to the volume change resulting from the alloy crystallization, which occurs at a concentration-dependent critical thickness.
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