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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

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Ultrafast nonlinear effects in hydrogenated amorphous silicon wire waveguide.

Yuya Shoji¹, Takeshi Ogasawara, Toshihiro Kamei

¹Network Photonics Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1Umezono, Tsukuba, Ibaraki 305-8568, Japan. y-shoji@aist.go.jp

|April 15, 2010

Summary

We report the ultrafast optical nonlinear response of hydrogenated amorphous silicon (a-Si:H) wire waveguides. This study reveals a response under 100 fs, indicating suppressed free-carrier effects due to localized states.

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Area of Science:

Materials Science
Optoelectronics
Nonlinear Optics

Background:

Hydrogenated amorphous silicon (a-Si:H) is a key material in optoelectronics.
Understanding its nonlinear optical properties is crucial for device development.
Ultrafast optical responses dictate the speed limits of photonic devices.

Purpose of the Study:

To investigate the ultrafast optical nonlinear response of a-Si:H wire waveguides.
To quantify nonlinear optical coefficients like the optical Kerr coefficient and two-photon absorption coefficient.
To elucidate the mechanisms behind the observed ultrafast response.

Main Methods:

Femtosecond laser pulses were used to probe the nonlinear optical behavior.
Heterodyne pump-probe spectroscopy was employed to measure cross-phase and cross-absorption modulations.
Nonlinear optical coefficients were estimated based on experimental measurements.

Main Results:

The study demonstrates an ultrafast optical nonlinear response in a-Si:H wire waveguides, faster than 100 femtoseconds.
Cross-phase and cross-absorption modulations were successfully measured.
The optical Kerr coefficient and two-photon absorption coefficient were estimated for the a-Si:H waveguide.
The observed ultrafast response suggests suppression of the free-carrier effect.

Conclusions:

Localized states within the band gap of a-Si:H effectively suppress the free-carrier effect.
This suppression enables ultrafast optical nonlinearities in a-Si:H waveguides.
The findings are significant for the design of high-speed photonic devices based on a-Si:H.