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Resonant frustrated-total-reflection technique for the characterization of thin films
1Western Electric Company, Inc., Engineering Research Center, P.O. Box 900, Princeton, New Jersey 08540, USA.
Applied Optics
|April 17, 2010
Summary
The resonant Fourier Transform Reflectometry (FTR) technique characterizes thin films using optical cavity resonances. This method provides accurate thin film parameter data, demonstrated with SiO(2) and Si epitaxial layers.
Area of Science:
- Optics and Photonics
- Materials Science
- Thin Film Characterization
Background:
- Characterizing thin films is crucial for semiconductor device fabrication.
- Existing optical techniques may have limitations in precision or applicability.
Purpose of the Study:
- To introduce and detail the resonant Fourier Transform Reflectometry (FTR) technique.
- To demonstrate the practical application of FTR for thin film analysis.
Main Methods:
- Incorporating the thin film into an optical cavity.
- Analyzing the optical response for resonance wavelengths and/or incidence angles.
- Utilizing Fourier Transform Reflectometry for precise optical measurements.
Main Results:
- Demonstrated successful application of resonant FTR to SiO(2) films.
- Showcased the technique's efficacy for Si epitaxial layers on Si substrates.
- Obtained accurate thin film parameters through resonance analysis.
Conclusions:
- Resonant FTR is an effective technique for thin film characterization.
- The method provides valuable data on film parameters.
- FTR offers a practical approach for analyzing various thin film systems.
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