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Updated: Jun 13, 2026

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
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Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser

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Principal angle spectroscopic ellipsometry utilizing a rotating analyzer.

D Chandler-Horowitz, G A Candela

    Applied Optics
    |April 17, 2010
    PubMed
    Summary
    This summary is machine-generated.

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    Ellipsometric techniques for measuring thin film thickness on silicon were compared. Operating at the principal angle of incidence maximizes accuracy and sensitivity for SiO(2) and Si(3)N(4) films.

    Area of Science:

    • Materials Science
    • Optical Physics
    • Surface Science

    Background:

    • Ellipsometry is a powerful optical technique for characterizing thin films.
    • Accurate measurement of film thickness is crucial in semiconductor manufacturing and materials science.
    • Different ellipsometric techniques offer varying levels of accuracy and sensitivity.

    Purpose of the Study:

    • To compare the accuracy of three ellipsometric techniques for thin film thickness measurement.
    • To determine the optimal angle of incidence for maximizing measurement accuracy.
    • To evaluate the performance of a variable angle of incidence spectroscopic ellipsometer.

    Main Methods:

    • Comparison of reflected light intensity variations near null as a function of the angle of incidence.

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  • Analysis of ellipsometric data for silicon dioxide (SiO(2)) and silicon nitride (Si(3)N(4)) films on silicon substrates.
  • Utilizing a rotating analyzer ellipsometer with variable angle of incidence.

    • Main Results:

    • Highest accuracy in film thickness measurement was achieved when the angle of incidence was at or near the principal angle.
    • This finding held true for all film thicknesses of SiO(2) and Si(3)N(4) on silicon.
    • A variable angle of incidence spectroscopic ellipsometer operated at the principal angle demonstrated high accuracy and sensitivity.

    Conclusions:

    • The principal angle of incidence is critical for maximizing the accuracy of ellipsometric thin film thickness measurements.
    • Variable angle of incidence spectroscopic ellipsometry, particularly when operated at the principal angle with a rotating analyzer, offers a versatile and highly accurate method.
    • This technique is well-suited for precise characterization of SiO(2) and Si(3)N(4) films on silicon.