Related Experiment Video
Updated: Jun 13, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Laser-induced damage measurements in CdTe and other II-VI materials
M J Soileau1, W E Williams, E W Stryland
1North Texas State University, Center for Applied Quantum Electronics, Physics Department, Denton, Texas 76203, USA.
Abstract:
Results of laser-induced damage measurements in CdTe and other selected II-VI materials are reported. These studies were conducted using pulsed 1.06-microm radiation from a Nd:YAG laser. The laser pulse width was varied from approximately 40 to 9000 psec (9 nsec). The laser-induced surface breakdown irradiance measured for CdTe over this pulse width range scaled as t(p)(-1/2)[t(p) is the laser pulse width (FWHM)]. This indicates that laser-induced damage in this material is due to linear absorption by a thin surface contamination layer.
