Related Experiment Video
Updated: Jun 13, 2026

Ligand-Mediated Nucleation and Growth of Palladium Metal Nanoparticles
Published on: June 25, 2018
Anomalous transport and possible phase transition in palladium nanojunctions
Gavin D Scott1, Juan J Palacios, Douglas Natelson
1Department of Physics and Astronomy, Rice University, 6100 Main Street, Houston, Texas 77005, USA. gavin.scott@rice.edu
Abstract:
Many phenomena in condensed matter are thought to result from competition between different ordered phases. Palladium is a paramagnetic metal close to both ferromagnetism and superconductivity and is, therefore, a potentially interesting material to consider. Nanoscale structuring of matter can modify relevant physical energy scales, leading to effects such as locally modified magnetic interactions. We present transport measurements in electromigrated palladium break junction devices showing the emergence at low temperatures of anomalous sharp features in the differential conductance. These features appear symmetrically in applied bias and exhibit a temperature dependence of their characteristic voltages reminiscent of a mean-field phase transition. The systematic variation of these voltages with zero bias conductance, together with density functional theory calculations illustrating the relationship between the magnetization of Pd and atomic coordination, suggests that the features may result from the onset of spontaneous magnetization in the nanojunction electrodes. We propose that the characteristic conductance features are related to inelastic tunneling involving magnetic excitations.
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

