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Updated: Jun 13, 2026
Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Enhanced efficiency of light emitting diodes with a nano-patterned gallium nitride surface realized by soft UV
Weimin Zhou1, Guoquan Min, Zhitang Song
1Key Lab of Nanotechnology Promotion Center (SNPC), Shanghai 200237, People's Republic of China. zhouweimin@snpc.org.cn
Abstract:
This paper reports a significant enhancement in the extraction efficiency of nano-patterned GaN light emitting diodes (LED) realized by soft UV nanoimprint lithography. The 2 inch soft stamp was fabricated using a replication stamp of anodic alumina oxide (AAO) membrane. The light output power was enhanced by 10.9% compared to that of the LED sample without a nano-patterned surface. Up to 41% enhancement in photoluminescence intensity was obtained from the nano-patterned GaN LED sample. The method is simple, cheap and suitable for mass production.
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