Related Experiment Video

Updated: Jun 12, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Direct laser writing of complementary logic gates and lateral p-n diodes in a solution-processible monolithic organic

Jean Charles Ribierre1, Takashi Fujihara, Satoshi Watanabe

  • 1Supramolecular Science Laboratory, RIKEN 2-1 Hirosawa, Wako, Saitama 351-0198, Japan. jcribierre@riken.jp

Advanced Materials (Deerfield Beach, Fla.)
|May 25, 2010
PubMed
Abstract

No abstract available in PubMed .

More Related Videos

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium12:38

Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium

Published on: December 16, 2011

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...