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Updated: Jun 12, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Nernst limit in dual-gated Si-nanowire FET sensors
O Knopfmacher1, A Tarasov, Wangyang Fu
1Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
Abstract:
Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.
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