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Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance
A Czerwinski1, M Pluska, J Ratajczak
1Institute of Electron Technology, 02-668 Warsaw, Al. Lotnikow 32/46, Poland. aczerwin@ite.waw.pl
Journal of Microscopy
|May 27, 2010
Abstract:
The dependence of spatially and spectrally resolved cathodoluminescence in a scanning electron microscope on resistances in semiconductor structures, especially on the layer resistance, is reported. This previously unstudied dependence is utilized for thin-layer sheet-resistance measurement. The method is illustrated by an assessment of lateral confinements in semiconductor-laser heterostructures.
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