Related Experiment Video
Updated: Jun 12, 2026

Novel 3D/VR Interactive Environment for MD Simulations, Visualization and Analysis
Published on: December 18, 2014
Characterization of silicon nanowire by use of full-vectorial finite element method
N Kejalakshmy1, Arti Agrawal, Yasin Aden
1School of Engineering and Mathematical Sciences, Northampton Square, London EC1V 0HB, UK.
Abstract:
We have carried out a rigorous H-field-based full-vectorial modal analysis and used it to characterize, more accurately, the abrupt dielectric discontinuity of a high index contrast optical waveguide. The full-vectorial H and E fields and the Poynting vector profiles are described in detail. It has been shown through this work that the mode profile of a circular silicon nanowire is not circular and also contains a strong axial field component. The single-mode operation, vector field profiles, modal hybridness, modal ellipticity, and group velocity dispersion of this silicon nanowire are also presented.
Related Concept Videos
Types of Semiconductors
Van der Waals Equation
First, the attractive forces between molecules, which are stronger at higher densities and reduce the pressure, are considered by adding to the pressure a term equal to the square of the molar density multiplied by a positive coefficient a. Second, the volume...
Debye–Huckel–Onsager Conductance Equation
