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Updated: Jun 12, 2026
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Summary
Phosphorus-diffused (n on p) photodiodes show greater stability than boron-diffused (p on n) types, especially in UV and blue light. Careful manufacturing ensures stable p on n devices are also achievable.
Area of Science:
- Semiconductor device physics
- Photodetector technology
Background:
- Quantum efficiency stability is crucial for photodiode performance.
- Instability factors include interface defects, recombination centers, and moisture.
Purpose of the Study:
- To investigate the stability of n on p and p on n photodiodes.
- To identify and mitigate causes of quantum efficiency degradation.
- To compare the inherent stability of different photodiode structures.
Main Methods:
- Fabrication of photodiodes with controlled interface and diffusion processes.
- Accelerated aging tests to induce degradation.
- Monitoring of external quantum efficiency over time.
Main Results:
- n on p photodiodes demonstrate superior stability in ultraviolet and blue spectral regions compared to p on n types.
- Careful process control can yield stable p on n photodiodes.
- Comparison with older fabrication methods highlighted the importance of controlled parameters.
Conclusions:
- The n on p photodiode structure offers inherent advantages for UV and blue light stability.
- Process optimization is key to achieving high-performance, stable photodiodes.
- This research provides insights for designing more reliable photodetectors.
