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Optical method for inspecting LSI patterns using reflected diffraction waves.

S Kimura, K Suda, S Hase

|June 10, 2010

Summary

This summary is machine-generated.

This study introduces an optical inspection method for detecting defects in LSI lithographic patterns. The system uses a laser beam and random access memories to rapidly identify flaws as small as 0.8 micrometers.

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Area of Science:

Semiconductor manufacturing
Optical metrology
Integrated circuit fabrication

Background:

Defect detection is critical for ensuring the quality and reliability of Large-Scale Integrated (LSI) circuits.
Traditional inspection methods can be time-consuming and may not detect sub-micrometer defects effectively.
Advancements in lithography necessitate faster and more sensitive inspection techniques.

Purpose of the Study:

To develop a rapid and sensitive optical inspection method for identifying defects in LSI lithographic patterns.
To leverage diffraction wave analysis for defect characterization.
To integrate signal processing with memory technology for real-time defect detection.

Main Methods:

Utilizing a focused Helium-Neon (He-Ne) laser beam to scan LSI patterns on a wafer.
Observing and analyzing the diffraction waves reflected from the scanned patterns.
Employing random access memories (RAM) for direct input of wave signals to enable rapid defect judgment.

Main Results:

The developed optical inspection system successfully detects defects with a minimum size of approximately 0.8 micrometers.
The system achieves a high inspection speed, capable of inspecting a 1 cm(2) chip in just 9 seconds.
Diffraction wave analysis proved effective in characterizing pattern defects.

Conclusions:

The proposed optical inspection method offers a fast and accurate solution for detecting small defects in LSI lithographic patterns.
The integration of optical sensing with RAM technology significantly enhances inspection efficiency.
This technique holds potential for improving quality control in semiconductor manufacturing.