Optical bistability and switching in nonresonant GaAs:Cr self-electrooptic effect devices

Area of Science:

• Optoelectronics
• Semiconductor Physics
• Nonlinear Optics

Background:

• Semi-insulating Gallium Arsenide doped with Chromium (GaAs:Cr) exhibits unique electro-optic properties.
• The thermal self-electrooptic effect offers a pathway for optical control of electronic signals.

Purpose of the Study:

• To investigate optical testability in a hybrid etalon of GaAs:Cr.
• To explore the underlying mechanisms of optical nonlinearity.
• To demonstrate optoelectronic logic gate operation.

Main Methods:

• Utilized the thermal self-electrooptic effect at a nonresonant wavelength (1.06 microm).
• Analyzed the temperature-dependent index of refraction.
• Investigated optical absorption attributed to bandtailing effects and trapping centers.

Main Results:

• Observed optical testability in the hybrid etalon.
• Identified the temperature-dependent refractive index as the primary source of nonlinearity, enhanced by optoelectromechanically induced power from photocurrent.
• Attributed optical absorption to bandtailing effects.

Conclusions:

• The thermal self-electrooptic effect in GaAs:Cr enables optical testability.
• Optoelectronic AND gate functionality was successfully demonstrated, integrating optical and electrical inputs.