Related Experiment Video
Updated: Jun 12, 2026
11:42
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Few-layer graphene characterization by near-field scanning microwave microscopy
Vladimir V Talanov1, Christopher Del Barga, Lee Wickey
1Semilab USA, LLC, 47 Manning Road, Billerica, Massachusetts 01821, USA. talanov@neocera.com
ACS Nano
|June 12, 2010
Summary
Near-field scanning microwave microscopy reveals graphene
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Graphene's unique electronic properties make it a promising material for advanced electronics.
- Accurate characterization of graphene's electrical properties is crucial for device development.
- Existing characterization methods may require complex fabrication steps.
Purpose of the Study:
- To quantitatively image the local impedance of graphene.
- To investigate the thickness-dependent microwave response of graphene.
- To explore near-field microwave microscopy as a tool for graphene characterization.
Main Methods:
- Near-field scanning microwave microscopy (NSMM) at 4 GHz.
- Quantitative imaging of local AC impedance.
- Calibration of measurement system and probe geometry.
Main Results:
- Graphene's microwave response is thickness-dependent and linked to sheet resistance.
- AC impedance of graphene is predominantly active.
- NSMM enables simultaneous imaging of graphene's location, geometry, thickness, and electrical properties.
Conclusions:
- Near-field microwave microscopy is a powerful, non-destructive technique for graphene characterization.
- This method facilitates the study of plasma waves in graphene.
- Device fabrication is not required for comprehensive graphene analysis using NSMM.
