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Modal study of GaAs waveguides with zinc-diffused boundaries
Applied Optics
|June 16, 2010
Summary
Single-mode planar channel waveguides were fabricated in gallium arsenide (GaAs) using zinc diffusion. The study experimentally investigated their modal behavior and analyzed them with a simple model.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Physics
Background:
- Planar channel waveguides are crucial components in integrated optics.
- Efficient fabrication methods for high-performance waveguides are essential for optical devices.
Purpose of the Study:
- To fabricate single-mode planar channel waveguides in gallium arsenide (GaAs).
- To experimentally investigate the modal behavior of these fabricated waveguides.
- To analyze the waveguide characteristics using a simplified theoretical model.
Main Methods:
- Utilized zinc (Zn) diffusion as the fabrication technique.
- Employed a Zn-doped spin-on-glass as the diffusion source material.
- Conducted experimental modal analysis of the resulting GaAs waveguides.
Main Results:
- Successfully fabricated single-mode planar channel waveguides in GaAs.
- Characterized the modal properties through experimental investigation.
- Validated the waveguide performance using a simple analytical model.
Conclusions:
- Zinc diffusion is an effective method for creating single-mode planar channel waveguides in GaAs.
- The experimental results align with the predictions of the simple analytical model.
- These waveguides show potential for applications in optoelectronic integrated circuits.
