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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Equivalent Capacitance01:19

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
Equivalent Capacitance01:19

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...

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Scanning-probe Single-electron Capacitance Spectroscopy
10:53

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Scanning acousto optic filter for measuring VLSI dynamic random access memory vertical capacitor cells.

K Takada, J Noda, S Nakajima

    Applied Optics
    |June 18, 2010
    PubMed
    Summary
    This summary is machine-generated.

    A novel trench depth measurement system utilizes a TeO(2) acoustooptic tunable filter and a symmetric wafer setup for precise monitoring in VLSI dynamic random access memory manufacturing. This system offers high speed, stable performance, and effective noise reduction for in-line process control.

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    Area of Science:

    • Semiconductor Manufacturing Technology
    • Metrology and Measurement Systems
    • Materials Science

    Background:

    • VLSI dynamic random access memory (DRAM) vertical capacitor cells require precise trench depth control.
    • Existing trench depth measurement systems may suffer from noise and limited sensitivity, impacting in-line process monitoring.

    Purpose of the Study:

    • To introduce a new trench depth measurement system for VLSI DRAM vertical capacitor cells.
    • To enhance the accuracy and stability of trench depth monitoring in semiconductor manufacturing.

    Main Methods:

    • Implementation of a tellurium dioxide (TeO(2)) acoustooptic tunable filter for high-speed signal averaging.
    • Utilizing a symmetric setup with test and reference wafers to minimize light power fluctuation noise.
    • Simultaneous detection of light beams reflected from test and reference wafers.

    Main Results:

    • The proposed system demonstrates high-speed signal averaging and stable performance, free from mechanical noise.
    • Effective minimization of noise due to light power fluctuation achieved through the symmetric setup.
    • The system shows promise for high trench depth detection sensitivity in in-line processes.

    Conclusions:

    • The developed trench depth measurement system is highly suitable for in-line monitoring in VLSI DRAM manufacturing.
    • The combination of the TeO(2) filter and symmetric setup provides a robust and sensitive solution for trench depth measurement.
    • This technology can significantly improve process control and yield in semiconductor fabrication.