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Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
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Published on: November 30, 2012

Carrier refraction in quantum well waveguides.

R A Soref, B R Bennett

    Applied Optics
    |June 18, 2010
    PubMed
    Summary
    This summary is machine-generated.

    Carrier-induced refractive index changes in indium gallium arsenide-indium aluminum arsenide (InGaAs-InAlAs) quantum well waveguides were calculated. A significant index change of -0.06 was observed at 1.65-micrometers for a 6 x 10^17 electrons/cm^3 injection.

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    Area of Science:

    • Optoelectronics
    • Semiconductor physics
    • Materials science

    Background:

    • Quantum well waveguides are crucial components in optoelectronic devices.
    • Understanding carrier-induced refractive index changes is essential for device design and performance.
    • Previous studies have explored optical properties of InGaAs-InAlAs heterostructures.

    Purpose of the Study:

    • To calculate carrier-induced refractive index changes in forward-biased InGaAs-InAlAs quantum well waveguides.
    • To propose a novel quantum well waveguide directional coupler switch design.

    Main Methods:

    • Kramers-Kronig transformation of experimental absorption spectra.
    • Analysis of Bar-Joseph's published data [Phys. Rev. Lett. 59, 1357 (1987)].
    • Calculation of refractive index changes at a specific wavelength (1.65 micrometers).

    Main Results:

    • A refractive index change of -0.06 was calculated for an electron injection of 6 x 10^17 electrons/cm^3.
    • The material was found to be nominally transparent at 1.65 micrometers.
    • A 2x2 reversed-Deltabeta directional coupler switch design using quantum well waveguides was proposed.

    Conclusions:

    • Carrier injection significantly alters the refractive index in InGaAs-InAlAs quantum well waveguides.
    • The proposed directional coupler switch design shows potential for optical switching applications.
    • Accurate calculation of refractive index changes is vital for optimizing optoelectronic device performance.