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Silicon nitride thin films by low voltage reactive ion plating: optical properties and composition
Applied Optics
|June 18, 2010
Summary
Transparent silicon nitride films were synthesized using low voltage reactive ion plating. These high-quality films were free of impurities and characterized for optical and chemical properties.
Area of Science:
- Materials Science
- Thin Film Technology
- Surface Engineering
Background:
- Silicon nitride (SiNx) films are crucial in semiconductor manufacturing and optical coatings.
- Controlling film stoichiometry and purity is essential for desired properties.
- Previous synthesis methods often resulted in hydrogen incorporation or impurities.
Purpose of the Study:
- To synthesize transparent, stoichiometric silicon nitride films.
- To investigate the properties of these films using advanced characterization techniques.
- To assess the effectiveness of low voltage reactive ion plating for high-purity SiNx deposition.
Main Methods:
- Deposition of silicon nitride films using a Balzers BAP 800 coating plant.
- Employing low voltage reactive ion plating technique.
- Characterization of film properties including optical constants, chemical composition, and hydrogen content.
Main Results:
- Transparent, stoichiometric silicon nitride films were successfully synthesized.
- The films were found to be free of hydrogen, oxygen, argon, and heavy metals.
- Optical constants, chemical composition, and hydrogen content were systematically investigated.
Conclusions:
- Low voltage reactive ion plating is an effective method for producing high-purity silicon nitride films.
- The synthesized films exhibit desirable properties for various technological applications.
- Further research can explore tailoring SiNx properties by optimizing deposition parameters.
