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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: Jun 12, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

Extrinsic silicon photodetector characterization.

J P Garcia, E L Dereniak

    Applied Optics
    |June 18, 2010
    PubMed
    Summary
    This summary is machine-generated.

    This study tested a gallium-doped silicon (Si:Ga) infrared detector for high-speed performance. The detector achieved a high detectivity-bandwidth product, confirming its suitability for advanced applications.

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    Last Updated: Jun 12, 2026

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    Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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    Area of Science:

    • Optoelectronics
    • Semiconductor Physics
    • Infrared Detectors

    Background:

    • Gallium-doped silicon (Si:Ga) is an extrinsic semiconductor material used for infrared detection.
    • Developing high-speed detectors without sacrificing sensitivity (detectivity, D*) is a key challenge in optoelectronics.

    Purpose of the Study:

    • To evaluate the sensitivity and response speed of a Si:Ga extrinsic photoconductive detector.
    • To determine the detectivity-bandwidth product (D*f*) for high-speed infrared detection applications.

    Main Methods:

    • Experimental testing of a p-type Si:Ga infrared photoconductor at 10.5 micrometers.
    • Development of a theoretical model incorporating optical absorption and carrier transport.
    • Comparison of theoretical predictions with experimental data.

    Main Results:

    • The Si:Ga detector demonstrated high speed operation with a photoconductive gain less than unity.
    • An experimental detectivity-bandwidth product (D*f*) of 3.69 x 10^18 cm-Hz^(3/2)/W was measured.
    • The theoretical model accurately predicted the experimental results, validating the underlying physics.

    Conclusions:

    • The Si:Ga detector meets the developmental goal of high-speed operation without compromising detectivity.
    • The validated theoretical model provides a framework for optimizing similar extrinsic infrared detectors.
    • This research contributes to the advancement of high-performance infrared sensing technologies.