Related Experiment Video
Updated: Jun 12, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Dynamic switching of hole character and single photon polarization using the quantum confined Stark effect in quantum
V Troncale1, K F Karlsson, E Kapon
1Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland. valentina.troncale@epfl.ch
Abstract:
The engineering of the three-dimensional (3D) heterostructure potential in GaAs/AlGaAs pyramidal quantum dot-in-dots (DiDs) provides control over the valence band symmetry and hence on the polarization of the emitted photons. We propose a technique for dynamic switching of hole character and photon polarization in DiDs by means of an applied electric field. The structural parameters required for producing this effect are discussed. Asymmetric DiDs are found to be particularly suitable for obtaining switching with fields smaller than 1 kV cm( - 1). The proposed device enables generation of single photons with dynamic control on the photon polarization, with potential applications in quantum information technology.
Related Concept Videos
Deactivation Processes: Jablonski Diagram
π Electron Effects on Chemical Shift: Overview
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

