Superconductivity-enhanced conductance fluctuations in few-layer graphene

We investigate the mesoscopic disorder induced rms conductance variance delta G in short few-layer graphene (FLG) flakes contacted by two superconducting (S) Ti/Al contacts. By sweeping the back-gate voltage, we observe pronounced conductance fluctuations superimposed on a linear background of the two-terminal conductance G. The linear gate voltage induced response can be modelled by a set of interlayer and intralayer capacitances. delta G depends on temperature T and source-drain voltage V(sd). delta G increases with decreasing T and |V(sd)|. When lowering |V(sd)|, a pronounced cross-over at a voltage corresponding to the superconducting energy gap Delta is observed. For [Formula: see text] the fluctuations are markedly enhanced. Expressed in the conductance variance G(GS) of one graphene-superconductor (G-S) interface, values of 0.58 e(2)/h are obtained at the base temperature of 230 mK. The conductance variance in the sub-gap region is larger by up to a factor of 1.4-1.8 compared to the normal state. The observed strong enhancement is due to phase coherent charge transfer caused by Andreev reflection at the G-S interface.