Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Numerical investigation of field enhancement by metal nano-particles using a hybrid FDTD-PSTD algorithm.

Optics express·2009
Same journal

Multifunctional reconfigurable terahertz metasurface based on vanadium dioxide phase transition: achieving broadband absorption and efficient polarization conversion.

Applied optics·2026
Same journal

High-Q-factor electromagnetically induced transparency utilizing quasi-bound states in the continuum in an all-dielectric terahertz metasurface.

Applied optics·2026
Same journal

Automated stitching interferometry for high-precision metrology of X-ray mirrors.

Applied optics·2026
Same journal

Experimental demonstration of an approach to designing a metal-dielectric DBR resonant cavity structure.

Applied optics·2026
Same journal

High-precision wavefront reconstruction from a single-shot interferogram using a physics-driven hybrid feature calibration network.

Applied optics·2026
Same journal

Ultra-high-Q Fano resonance based on coupled topological corner states in Kagome photonic crystals.

Applied optics·2026
See all related articles

Related Experiment Video

Updated: Jun 12, 2026

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
08:21

Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

Published on: March 20, 2015

Gain-coupled optical logic in semiconductor lasers.

D F Gallagher

    Applied Optics
    |June 26, 2010
    PubMed
    Summary
    This summary is machine-generated.

    A novel optical logic device utilizes gain competition in a semiconductor waveguide cavity to perform NOT, NOR, and NAND functions. This innovative device offers high speed and cascadability for advanced optical computing applications.

    More Related Videos

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    Related Experiment Videos

    Last Updated: Jun 12, 2026

    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
    08:21

    Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies

    Published on: March 20, 2015

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    Area of Science:

    • Optoelectronics
    • Semiconductor devices
    • Optical computing

    Background:

    • Existing optical logic devices often face limitations in speed, isolation, or wavelength sensitivity.
    • Developing high-performance optical logic components is crucial for advancing optical communication and computation.

    Purpose of the Study:

    • To introduce a new semiconductor waveguide cavity-based optical logic device.
    • To demonstrate NOT, NOR, and NAND logic functions using gain competition between optical modes.
    • To achieve high input/output isolation and low input reflection.

    Main Methods:

    • Utilizing gain competition between two spatially separated optical modes within a semiconductor waveguide cavity.
    • Designing the device for efficient input/output coupling and minimal reflection.
    • Leveraging carrier level dynamics for high-speed switching.

    Main Results:

    • The device successfully implements NOT, NOR, and NAND logic functions.
    • High input/output isolation and very low input reflection are achieved.
    • Switching speeds significantly exceeding carrier lifetime (70-100 ps expected) and wavelength insensitivity are demonstrated.

    Conclusions:

    • The developed optical logic device offers a promising solution for high-speed, cascadable optical computing.
    • Its design overcomes key limitations of previous optical logic technologies.
    • The device's performance characteristics suggest potential for practical implementation in future optical systems.