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Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Synthesis of Hierarchical ZnO/CdSSe Heterostructure Nanotrees
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Published on: November 29, 2016

Coaxial ZnSe/Si nanocables with controlled p-type shell doping.

Li Wang1, Jiansheng Jie, Chunyan Wu

  • 1School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei Anhui, 230009, People's Republic of China.

Nanotechnology
|June 30, 2010
PubMed
Summary

Researchers developed coaxial zinc selenide/silicon (ZnSe/Si) nanocables using a two-step method. This advancement offers potential for novel nano-optoelectronic devices by enabling tunable conductivity in silicon shells.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Coaxial nanocables offer unique properties for advanced electronic applications.
  • Developing methods for controlled synthesis of core-shell nanostructures is crucial.
  • Zinc selenide (ZnSe) and silicon (Si) are key semiconductor materials.

Purpose of the Study:

  • To synthesize coaxial ZnSe/Si nanocables using a facile two-step approach.
  • To investigate the structural and electrical properties of the synthesized nanocables.
  • To explore the potential of these nanocables in nano-optoelectronic applications.

Main Methods:

  • Two-step synthesis: ZnSe nanowire core formation via thermal evaporation.
  • Chemical vapor deposition (CVD) for Si shell growth on ZnSe cores.
  • Boron (B) diffusion for controlled p-type doping of Si shells.

Main Results:

  • Successfully produced coaxial ZnSe/Si nanocables with cubic ZnSe cores and polycrystalline Si shells.
  • Achieved tunable conductivity in Si shells over eight orders of magnitude by adjusting B concentration.
  • Measured hole mobility of 11.7 cm(2) V(-1) s(-1) and hole concentration of 2 x 10(15) cm(-3) in modestly doped Si shells.

Conclusions:

  • The developed two-step method provides a simple route to synthesize coaxial ZnSe/Si nanocables.
  • Controlled p-type doping of Si shells allows for tunable electrical properties.
  • These ZnSe/Si core/shell nanocables show significant promise for future nano-optoelectronic devices.