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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: Jun 11, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

High performance organic semiconductors for field-effect transistors.

Huanli Dong1, Chengliang Wang, Wenping Hu

  • 1Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China.

Chemical Communications (Cambridge, England)
|June 30, 2010
PubMed
Summary

High performance organic semiconductors are advancing rapidly for organic electronics. This review offers guidelines for designing novel organic field-effect semiconductors exceeding amorphous silicon mobility.

Related Experiment Videos

Last Updated: Jun 11, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Area of Science:

  • Materials Science
  • Organic Electronics
  • Semiconductor Physics

Background:

  • Organic semiconductors are emerging materials for electronic devices.
  • Field-effect transistors (FETs) are key components in electronic circuits.
  • Achieving high charge carrier mobility is crucial for practical applications.

Purpose of the Study:

  • To provide an overview of recent advancements in high-performance organic semiconductors for FETs.
  • To highlight organic semiconductors with mobility comparable to or exceeding amorphous silicon.
  • To offer guidance for designing and synthesizing new high-performance organic semiconductors.

Main Methods:

  • Literature review of recent research in organic semiconductor development.
  • Analysis of performance metrics, particularly charge carrier mobility.
  • Focus on organic semiconductors suitable for field-effect transistor applications.

Main Results:

  • Identification of organic semiconductors achieving mobility benchmarks previously met only by inorganic materials like amorphous silicon.
  • Demonstration of significant progress in enhancing the performance of organic semiconductors.
  • Highlighting the potential for practical applications in the near future.

Conclusions:

  • High-performance organic semiconductors are nearing practical viability.
  • Continued research and development are essential for advancing organic electronics.
  • This review serves as a guide for future design and synthesis efforts.