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Updated: Jun 11, 2026
Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Optical properties of red emitting self-assembled InP/(Al0.20Ga0.80)0.51In0.49P quantum dot based micropillars
Wolfgang-Michael Schulz1, Tim Thomay, Marcus Eichfelder
1Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, D-70569 Stuttgart, Germany.
Abstract:
Using focused ion beam etching techniques, micropillar cavities were fabricated from a high reflective AlAs/AlGaAs distributed Bragg reflector planar cavity containing self-assembled InP quantum dots in (Al(0.20)Ga(0.80))(0.51)In(0.49)P barrier layers. The mode spectra of pillars with different diameters were investigated using micro-photoluminescence, showing excellent agreement with theory. Quality factors of the pillar cavities up to 3650 were observed. Furthermore, for a microcavity pillar with 1.26 mum diameter, single-photon emission is demonstrated by performing photon correlation measurements under pulsed excitation.
