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Schottky Barrier Diode

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...

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Updated: Jun 11, 2026

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Terahertz Microfluidic Sensing Using a Parallel-plate Waveguide Sensor

Published on: August 30, 2012

Surface plasmon waveguide Schottky detector.

Ali Akbari¹, R Niall Tait, Pierre Berini

¹School of Information Technology and Engineering, University of Ottawa, 161 Louis Pasteur St., Ottawa, K1N 6N5, Canada.

|July 1, 2010

Summary

This summary is machine-generated.

A novel infrared detector using surface plasmon polaritons (SPPs) on silicon is demonstrated. This device enables efficient optical detection below silicon's bandgap, promising for integrated photonics.

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Area of Science:

Plasmonics
Infrared detection
Semiconductor devices

Background:

Surface plasmon polaritons (SPPs) enable light confinement at metal-dielectric interfaces.
Detecting infrared light below the bandgap of silicon is challenging for conventional photodetectors.
Internal photoemission is a mechanism for detecting sub-bandgap photons.

Purpose of the Study:

To demonstrate a surface plasmon polariton detector operating at infrared wavelengths.
To investigate the performance of metal-silicon Schottky contacts for SPP detection.
To explore the potential of this device for integrated photonic applications.

Main Methods:

Fabrication of a metal stripe (gold or aluminum) on n-type silicon to form a Schottky contact.
Excitation of surface plasmon polariton modes at the metal-semiconductor interface.
Detection of optical radiation via internal photoemission below the silicon bandgap.
Measurement of responsivity using end-fire coupling to a tapered optical fiber at 1280 nm.

Main Results:

Demonstration of an SPP detector at infrared wavelengths.
Achieved responsivities of 0.38 mA/W (gold) and 1.04 mA/W (aluminum) at room temperature.
Detection mechanism confirmed to be internal photoemission for sub-bandgap optical radiation.

Conclusions:

The demonstrated SPP detector efficiently detects infrared light below silicon's bandgap.
The device shows potential for integration into nano-plasmonic, nano-photonic, and silicon photonics systems.
Promising applications include short-reach optical interconnects and optical power monitoring.