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Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

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An all-silicon, single-mode Bragg cladding rib waveguide.

Ee Jin Teo¹, Andrew A Bettiol, Boqian Xiong

¹Centre for Ion Beam Applications (CIBA), Department of Physics, 2 Science Drive 3, National University of Singapore, 117542, Singapore. phytej@nus.edu.sg

|July 1, 2010

Summary

This summary is machine-generated.

Researchers developed a direct method for fabricating silicon Bragg waveguides using proton beam irradiation and etching. This technique enables monolithic integration, achieving low-loss, single-mode light guiding for silicon photonics.

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Area of Science:

Photonics and optical engineering
Materials science
Semiconductor device fabrication

Background:

Bragg waveguides are crucial for optical confinement in integrated photonic circuits.
Existing fabrication methods often involve complex multi-step processes, limiting monolithic integration.
Silicon photonics demands efficient and scalable waveguide fabrication techniques.

Purpose of the Study:

To demonstrate a direct, single-step fabrication method for all-silicon Bragg cladding rib waveguides.
To investigate the performance of these waveguides in terms of optical confinement and signal loss.
To enable monolithic integration of Bragg waveguides within silicon photonic platforms.

Main Methods:

Fabrication using proton beam irradiation to control porous silicon layer thickness.
Subsequent electrochemical etching to define the waveguide structure.
Characterization of optical properties, including guiding loss and polarization dependence.

Main Results:

Successfully fabricated an all-silicon, single-mode Bragg cladding rib waveguide.
Achieved single-mode guiding for both TE and TM polarizations.
Obtained low optical losses of approximately 1 dB/cm across a broad wavelength range (1525-1625 nm).

Conclusions:

The demonstrated method provides a direct route for fabricating silicon Bragg waveguides.
Proton beam irradiation and electrochemical etching offer precise control over waveguide dimensions and optical barriers.
This approach facilitates monolithic integration of advanced waveguide structures in silicon photonics without complex material deposition.