Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Jun 11, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Broadband external cavity tunable quantum dot lasers with low injection current density.

X Q Lv1, P Jin, W Y Wang

  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, People's Republic of China. pengjin@red.semi.ac.cn

Optics Express
|July 1, 2010
PubMed
Summary

A novel broadband laser using InAs/GaAs quantum dots achieves wide wavelength tuning. Antireflection coating expands bandwidth but increases threshold current density.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

[The role of water-soluble vitamin for injection in determining ureteral patency by cystoscopy in transvaginal high uterosacral ligament suspension procedure].

Zhonghua fu chan ke za zhi·2026
Same author

[Effectiveness of early proactive telephone follow-up on perioperative medication adherence in patients with atrial fibrillation].

Zhonghua nei ke za zhi·2026
Same author

[Clinicopathologic features and prognosis of retroperitoneal unicentric Castleman disease: report of 38 patients].

Zhonghua wei chang wai ke za zhi = Chinese journal of gastrointestinal surgery·2026
Same author

[Treatment practice and outcomes in 125 patients with autoimmune hemolytic anemia: a single-center retrospective analysis].

Zhonghua xue ye xue za zhi = Zhonghua xueyexue zazhi·2026
Same author

[Reasonable extent of No.12a lymph node dissection in laparoscopic surgery for locally advanced distal gastric cancer].

Zhonghua wei chang wai ke za zhi = Chinese journal of gastrointestinal surgery·2026
Same author

Integrated omics-based analysis reveals distinct microbial-metabolite interaction networks in eosinophilic and non-eosinophilic chronic rhinosinusitis with nasal polyps in a Chinese population.

Rhinology·2026

Area of Science:

  • Optoelectronics
  • Semiconductor Lasers
  • Quantum Dot Physics

Background:

  • Quantum dots (QDs) offer unique optical properties for laser applications.
  • External cavity lasers provide wavelength tunability.
  • Grating-based cavities enable precise wavelength selection.

Purpose of the Study:

  • To develop a broadband grating-coupled external cavity laser using InAs/GaAs quantum dots.
  • To investigate the impact of cavity length and antireflection (AR) facet coating on laser performance.
  • To achieve wide wavelength tuning covering multiple quantum dot emission states.

Main Methods:

  • Fabrication of a grating-coupled external cavity laser incorporating InAs/GaAs quantum dots.
  • Characterization of the laser's wavelength tuning range and bandwidth under continuous-wave (CW) injection.

More Related Videos

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Related Experiment Videos

Last Updated: Jun 11, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
09:10

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
12:57

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

  • Systematic study of the effects of varying cavity length and applying AR facet coatings.

    • Main Results:

    • Achieved a broadband laser with a tuning range from 1141.6 nm to 1251.7 nm at a low current density (458 A/cm²).
    • The tunable bandwidth encompassed both ground and first excited states of the quantum dots.
    • Antireflection facet coating significantly expanded the tuning bandwidth to approximately 150 nm.
    • An increase in threshold current density was observed with AR coating, linked to reduced light-matter interaction.

    Conclusions:

    • Demonstrated a highly tunable broadband laser based on InAs/GaAs quantum dots.
    • Antireflection facet coating is an effective method to broaden the tuning range.
    • Trade-offs exist between bandwidth expansion and threshold current density due to altered light-matter interaction.