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Optical nonlinearities in hydrogenated-amorphous silicon waveguides.

Karthik Narayanan1, Stefan F Preble

  • 1Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA. kxn0404@rit.edu

Optics Express
|July 1, 2010
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Summary
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Hydrogenated-amorphous silicon (a-Si:H) shows strong optical nonlinearities, with a nonlinear refractive index 5 times greater than crystalline silicon. This makes a-Si:H a promising material for advanced nonlinear silicon photonics applications.

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Area of Science:

  • Materials Science
  • Photonics
  • Optoelectronics

Background:

  • Silicon photonics is crucial for integrated optical circuits.
  • Hydrogenated-amorphous silicon (a-Si:H) is a potential material for silicon photonics due to its unique properties.
  • Understanding optical nonlinearities is key to designing efficient photonic devices.

Purpose of the Study:

  • To experimentally measure the optical nonlinearities of hydrogenated-amorphous silicon (a-Si:H) waveguides.
  • To compare the nonlinear properties of a-Si:H with crystalline silicon.
  • To assess the potential of a-Si:H for nonlinear silicon photonics.

Main Methods:

  • Transmission of ultra-short optical pulses through a-Si:H waveguides.
  • Measurement of two-photon absorption coefficient (beta).
  • Determination of nonlinear phase shift and nonlinear refractive index (n2).
  • Calculation of nonlinear coefficient (gamma) and free carrier absorption coefficient (sigma).

Main Results:

  • Measured two-photon absorption coefficient beta = 4.1 cm/GW.
  • Achieved a 3.5pi nonlinear phase shift at 4.1 W coupled input power.
  • Nonlinear refractive index n2 = 4.2 x 10^-13 cm^2/W.
  • Nonlinear coefficient gamma = 2003 (Wm)^-1, which is at least 5 times higher than in crystalline silicon.
  • Free carrier absorption coefficient sigma = 1.9 x 10^-16 cm^2, consistent with the Drude-Lorenz model.

Conclusions:

  • a-Si:H exhibits significantly enhanced nonlinear optical properties at 1550 nm compared to crystalline silicon.
  • The measured nonlinear parameters indicate a-Si:H is a highly promising material for nonlinear silicon photonics.
  • a-Si:H offers a viable platform for developing next-generation integrated photonic devices with enhanced nonlinear functionalities.