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Related Concept Videos

Atomic Emission Spectroscopy: Interference01:30

Atomic Emission Spectroscopy: Interference

In atomic emission spectroscopy (AES), high-temperature atomizers excite a broad range of elements and molecules that generate complex emissions from sources such as oxides, hydroxides, and flame combustion products in the flame or plasma. Several strategies can be employed to minimize spectral interferences caused by overlapping emission lines or bands. These include increasing instrument resolution, choosing alternative emission lines, optimally placing the detector in low-background regions,...
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Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Atomic Absorption Spectroscopy: Interference01:25

Atomic Absorption Spectroscopy: Interference

Interference leads to systematic error in atomic absorption (AA) measurements by enhancing or diminishing the analytical signal or the background. These interferences can be grouped into three main categories: spectral interference, chemical interference, and physical interference.
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Fermi Level Dynamics01:12

Fermi Level Dynamics

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The work...
Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Two-photon interference with a semiconductor integrated source at room temperature.

X Caillet1, A Orieux, A Lemaître

  • 1Laboratoire Matériaux et Phénomènes Quantiques, UMR 7162 CNRS-Université Paris, Diderot, Paris Cedex 13, France.

Optics Express
|July 1, 2010
PubMed
Summary
This summary is machine-generated.

Researchers developed a semiconductor microcavity source for twin photons at room temperature. This breakthrough enables efficient generation of indistinguishable photon pairs for quantum applications.

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Area of Science:

  • Quantum optics
  • Semiconductor device physics
  • Photonics

Background:

  • Integrated photon sources are crucial for quantum technologies.
  • Semiconductor microcavities offer miniaturization and on-chip integration potential.

Purpose of the Study:

  • To demonstrate an integrated semiconductor ridge microcavity source of counterpropagating twin photons.
  • To operate the source at room temperature in the telecom range.
  • To assess the efficiency and indistinguishability of the generated photon pairs.

Main Methods:

  • Utilized type II spontaneous parametric down-conversion (SPDC) in a semiconductor ridge microcavity.
  • Employed counterpropagating phase-matching for efficient photon pair generation.
  • Performed Hong-Ou-Mandel interference experiments to measure photon indistinguishability.

Main Results:

  • Achieved a photon pair generation efficiency of approximately 10⁻¹¹.
  • Obtained a spectral linewidth of 0.3 nm for a 1 mm long sample.
  • Demonstrated 85% visibility in the Hong-Ou-Mandel interference, indicating high photon indistinguishability.

Conclusions:

  • Successfully demonstrated a room-temperature, integrated semiconductor source of counterpropagating twin photons.
  • The results highlight the potential of semiconductor microcavities for generating high-quality entangled photon pairs.
  • This work paves the way for novel guided-wave semiconductor quantum devices.