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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Surface phonon polariton characteristics of In(0.04)Al(0.06)Ga(0.90)N/AlN/Al(2)O(3) heterostructure

S S Ng1, S C Lee, S K Mohd Bakhori

  • 1Nano-Optoelectronic Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia. shashiong@yahoo.com

Optics Express
|July 1, 2010
PubMed

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