Silicon-based plasmonic waveguides

We propose and comprehensively investigate Si-based plasmonic waveguides as a means to confine and manipulate photonic signals. The high refractive index of Si assures strong confinement and a very high level of photonic integration with achievable waveguide separations of the order of 10 nm and waveguide bends with 500 nm radius at telecommunication wavelengths, while using Al and Cu plasmonic material platforms, makes such waveguides fully compatible with existing CMOS fabrication processes. Their potential future in hybrid electronic/photonic chips is further reinforced as various configurations have been shown to compensate SPP propagation loss. The group velocity dispersion of such waveguides allows over 10 Tb/s signal transfer rates. The figures of merit allowing comparison of passive and active functionalities achievable with various waveguides have also been introduced.