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Local-illuminated ultrathin silicon nanomembranes with photovoltaic effect and negative transconductance

Ping Feng1, Ingolf Mönch, Gaoshan Huang

  • 1Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany.

Advanced Materials (Deerfield Beach, Fla.)
|July 1, 2010
PubMed
Abstract

No abstract available in PubMed .

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...