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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Photorefractive effect in undoped aluminum nitride
Toru Nagai1, Ryushi Fujimura, Tsutomu Shimura
1Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-Ku, Tokyo 153-8505, Japan. nagai@iis.u-tokyo.ac.jp
Abstract:
We report our observation of the photorefractive effect in undoped aluminum nitride. We measured the coupling constant and the formation rate as a function of pump intensity at a wavelength of 405 nm in a two-wave mixing experiment. The photorefractive gain coefficient was 0.47 cm(-1) at I = 6.9 W/cm(2), and the actual saturated value was probably larger than this. The time constant was 59 ms at I = 1.0 W/cm(2). In addition to a refractive index grating, an absorption grating was also formed, which is attributed mainly to an ionized trap density modulation process.

