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Updated: Jun 11, 2026

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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
Nanoscale Research Letters
|July 3, 2010
Abstract:
GaAs was radially deposited on InAs nanowires by metal-organic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.
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