Related Experiment Video

Updated: Jun 10, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

High-performance Langmuir-Blodgett monolayer transistors with high responsivity

Yang Cao1, Zhongming Wei, Song Liu

  • 1Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.

Angewandte Chemie (International Ed. in English)
|July 16, 2010
PubMed
Summary

No abstract available in PubMed .

More Related Videos

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Related Experiment Videos

Last Updated: Jun 10, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

Articles linked to this work by shared authors, journal, and citation graph.

Day-Night Visual Perception Enabled by Vis-NIR Broadband Adaptive Transistors.

Advanced materials (Deerfield Beach, Fla.)·2026

Autonomous Motion Vision with Tri-bulk-heterojunctioned Organic Adaptation Transistor.

Nature communications·2026

Organic Transistor with Dual-Heterojunctions Embedded Dielectric for Trimodal Self-Adaptation Vision.

Advanced materials (Deerfield Beach, Fla.)·2026

Confined Assembly of Polymer Nanowires for High-Performance Organic Thermoelectrics.

Advanced materials (Deerfield Beach, Fla.)·2026

Mechanically Programmable Tristate Molecular Switching Through Controlled Fullerene Assembly.

Advanced materials (Deerfield Beach, Fla.)·2026

Engineering Molecular Assembly for High Performance Plastic Thermoelectrics.

Accounts of chemical research·2026

Macrocycle-Based Charge-Transfer Cocrystals: From Host-Guest Recognition to Multifunctional Solid-State Materials.

Angewandte Chemie (International ed. in English)·2026

Dynamic Diels-Alder Chemistry Toward Degradable and Dual Closed-Loop Recyclable Polyolefins.

Angewandte Chemie (International ed. in English)·2026

Downsizing the Histone H3-H4 Quaternary Structure Into Foldamer Mimetics Yields High-Affinity and Cell-Permeable Ligands of ASF1.

Angewandte Chemie (International ed. in English)·2026

Dopant-Tailored Matrices: A Crystal Engineering Strategy for Organic Room-Temperature Phosphorescent Host-Guest Systems and Beyond.

Angewandte Chemie (International ed. in English)·2026

Oxophilic Gallium Single-Atom Regulating Micropore-Confined Os Atomic Clusters Enables Efficient Alkaline Hydrogen Electrocatalysis.

Angewandte Chemie (International ed. in English)·2026

Donor-Glycolated Quinoidal Polymers Enable Fast N-Type Organic Electrochemical Transistors.

Angewandte Chemie (International ed. in English)·2026

An In-Air Illumination Induced Surface Transformation for Mitigating Charge Recombination at BiVO4 Photoanodes.

The journal of physical chemistry letters·2026

Positive-Negative Photoelectric Effect Induced by the Asymmetric Schottky Interface and Its Application in Polarization-Sensitive Infrared Wavelength-Recognizing Artificial Visual Synapses.

The journal of physical chemistry letters·2026

Fluorination Molecular Engineering of Trimethyl Phosphite: A Multiscale Theoretical Study.

The journal of physical chemistry. B·2026

Interface engineering of perovskite transistors with self-assembled monolayers.

Materials horizons·2026

Results and model for single-gate ratchet charge pumping.

Journal of applied physics·2026

Electroactive PVDF-based composite thin films incorporating metal phosphate fillers as flexible dielectric substrates for dual-band microwave antennas.

RSC advances·2026
See all related articles
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies
Jove
Visualize
Contact Us