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Updated: Jun 10, 2026

10:31
Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
High-performance Langmuir-Blodgett monolayer transistors with high responsivity
Yang Cao1, Zhongming Wei, Song Liu
1Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.
Angewandte Chemie (International Ed. in English)
|July 16, 2010
Summary
No abstract available in PubMed .
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