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Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Related Experiment Video

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Fabrication and Characterization of Superconducting Resonators
10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

Silicon on Insulator MESFETs for RF Amplifiers.

Seth J Wilk1, Asha Balijepalli, Joseph Ervin

  • 1Arizona State University, Center for Solid State Electronics Research, Tempe, AZ 85287.

Solid-State Electronics
|July 27, 2010
PubMed
Summary
This summary is machine-generated.

High-voltage silicon-on-insulator (SOI) MESFETs fabricated with a standard CMOS process achieve high frequencies. These devices enable low-power, high-performance radio frequency (RF) amplifiers for advanced electronics.

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Area of Science:

  • Electrical Engineering
  • Materials Science
  • Semiconductor Device Physics

Background:

  • Standard CMOS processes face limitations in high-voltage applications.
  • Silicon-on-insulator (SOI) technology offers potential for enhanced device performance.
  • Radio Frequency (RF) front-end design requires components with high gain and low noise figures.

Purpose of the Study:

  • To fabricate high-voltage SOI MESFETs using a standard 3.3V CMOS process.
  • To characterize the RF performance and breakdown voltage of the fabricated SOI MESFETs.
  • To design and validate a low-noise RF amplifier using the developed SOI MESFET model.

Main Methods:

  • Fabrication of SOI MESFETs utilizing a modified standard 3.3V CMOS process.
  • Characterization of device performance, including cut-off frequency (fT), maximum oscillation frequency (fmax), and breakdown voltage.
  • Development of a SPICE model (TOM3) for the SOI MESFET.
  • Design and PCB fabrication of a source-degenerated low-noise RF amplifier operating near 1GHz.

Main Results:

  • Successfully fabricated CMOS-compatible, high-voltage SOI MESFETs without process modification.
  • Achieved fT of 7.3GHz and fmax of 21GHz for a 0.6µm gate length device.
  • Demonstrated performance stability up to breakdown voltages exceeding standard CMOS devices.
  • Designed and tested RF amplifier achieved 9.9dB gain and 3.8dB noise figure at 940MHz with 5mW DC power consumption.

Conclusions:

  • CMOS-compatible high-voltage SOI MESFETs are viable for RF applications.
  • The developed SPICE model accurately represents device behavior for circuit design.
  • The fabricated low-noise amplifier demonstrates the practical utility of SOI MESFETs in power-efficient RF front-ends.