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Updated: Jun 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene

Guangyu Xu1, Carlos M Torres, Yuegang Zhang

  • 1Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.

Nano Letters
|August 6, 2010
PubMed

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