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Updated: Jun 10, 2026

Fabrication of Bi2Te3 and Sb2Te3 Thermoelectric Thin Films using Radio Frequency Magnetron Sputtering Technique
Published on: May 17, 2024
Identifying the specific nanostructures responsible for the high thermoelectric performance of (Bi,Sb)2Te3
Wenjie Xie1, Jian He, Hye Jung Kang
1State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China.
Abstract:
Herein, we report the synthesis of multiscale nanostructured p-type (Bi,Sb)(2)Te(3) bulk materials by melt-spinning single elements of Bi, Sb, and Te followed by a spark plasma sintering process. The samples that were most optimized with the resulting composition (Bi(0.48)Sb(1.52)Te(3)) and specific nanostructures showed an increase of approximately 50% or more in the figure of merit, ZT, over that of the commercial bulk material between 280 and 475 K, making it suitable for commercial applications related to both power generation and refrigeration. The results of high-resolution electron microscopy and small angle and inelastic neutron scattering along with corresponding thermoelectric property measurements corroborate that the 10-20 nm nanocrystalline domains with coherent boundaries are the key constituent that accounts for the resulting exceptionally low lattice thermal conductivity and significant improvement of ZT.
