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Related Concept Videos

Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Published on: July 24, 2015

Hysteresis reversion in graphene field-effect transistors.

Zhi-Min Liao1, Bing-Hong Han, Yang-Bo Zhou

  • 1Department of Physics, State Key Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China. liaozm@pku.edu.cn

The Journal of Chemical Physics
|August 7, 2010
PubMed
Summary

Understanding carrier transfer in graphene/SiO(2) interfaces is key for better field-effect transistors (FETs). This study reveals that carrier trapping/detrapping at the interface significantly influences FET hysteresis loops.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene field-effect transistors (FETs) are promising for advanced electronics.
  • The graphene/SiO(2) interface is critical for FET performance.
  • Carrier dynamics at this interface are not fully understood.

Purpose of the Study:

  • To investigate the temperature-dependent transfer characteristics of graphene FETs.
  • To elucidate the role of the graphene/SiO(2) interface in device behavior.
  • To identify mechanisms governing hysteresis in graphene FETs.

Main Methods:

  • Fabrication of graphene/SiO(2) based FET devices.
  • Electrical characterization of FETs across a range of temperatures.
  • Analysis of transfer characteristics and hysteresis loops.

Main Results:

  • Temperature significantly affects the transfer characteristics of graphene FETs.
  • Hysteresis in the transfer curves is observed.
  • The magnitude and shape of the hysteresis loop are strongly correlated with interface carrier dynamics.

Conclusions:

  • Carrier trapping and detrapping at the graphene/SiO(2) interface are the dominant mechanisms responsible for hysteresis in graphene FETs.
  • Understanding these interface phenomena is crucial for optimizing graphene FET performance.
  • This work provides insights for designing more stable and efficient graphene-based electronic devices.