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Updated: Jun 10, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Double-gate nanowire field effect transistor for a biosensor
Jae-Hyuk Ahn1, Sung-Jin Choi, Jin-Woo Han
1Department of Electrical Engineering, Center for Systems and Synthetic Biotechnology, and Institute for the BioCentury, Yuseong-gu, Daejeon 305-701, Republic of Korea.
Abstract:
A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors. The charge effect arising from biomolecules was also analyzed. Double-gate nanowire FET can pave the way for an electrically working biosensor without a labeling process.
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