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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
Published on: December 7, 2017
Piezopotential gated nanowire--nanotube hybrid field-effect transistor
Weihua Liu1, Minbaek Lee, Lei Ding
1School of Material Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
Abstract:
We report the first piezoelectric potential gated hybrid field-effect transistors based on nanotubes and nanowires. The device consists of single-walled carbon nanotubes (SWNTs) on the bottom and crossed ZnO piezoelectric fine wire (PFW) on the top with an insulating layer between. Here, SWNTs serve as a carrier transport channel, and a single-crystal ZnO PFW acts as the power-free, contact-free gate or even an energy-harvesting component later on. The piezopotential created by an external force in the ZnO PFW is demonstrated to control the charge transport in the SWNT channel located underneath. The magnitude of the piezopotential in the PFW at a tensile strain of 0.05% is measured to be 0.4-0.6 V. The device is a unique coupling between the piezoelectric property of the ZnO PFW and the semiconductor performance of the SWNT with a full utilization of its mobility. The newly demonstrated device has potential applications as a strain sensor, force/pressure monitor, security trigger, and analog-signal touch screen.
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