Schottky Barrier Diode
Biasing of Metal-Semiconductor Junctions
Metal-Semiconductor Junctions
π Electron Effects on Chemical Shift: Overview
P-N junction
π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds
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Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
Published on: September 12, 2014
S Fujita1, T R C Wells, W Ushio
1Production/Design Technology Center, Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho, Nakagyo-ku, Kyoto 604-8511, Japan. fujita@shimadzu.co.jp
Schottky emitters have low angular current intensity, limiting their use. Scaling the emitter tip radius significantly enhanced angular intensity, enabling high beam currents for electron probe systems.
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