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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0, resulting in...
P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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π Electron Effects on Chemical Shift: Aromatic and Antiaromatic Compounds

In aromatic compounds, such as benzene, the circulation of (4n + 2) π-electrons sets up a diamagnetic or diatropic ring current around the perimeter of the molecule. This current induces a magnetic field that opposes the external field inside the ring and reinforces it on the outside. The protons in benzene are deshielded and exhibit high chemical shifts in the range 6.5–8.5 ppm. The shielding effect at the center of the ring is evident in complex aromatic molecules, such as annulenes. In...

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Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
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Enhanced angular current intensity from Schottky emitters.

S Fujita1, T R C Wells, W Ushio

  • 1Production/Design Technology Center, Shimadzu Corporation, 1, Nishinokyo-Kuwabaracho, Nakagyo-ku, Kyoto 604-8511, Japan. fujita@shimadzu.co.jp

Journal of Microscopy
|August 13, 2010
PubMed
Summary
This summary is machine-generated.

Schottky emitters have low angular current intensity, limiting their use. Scaling the emitter tip radius significantly enhanced angular intensity, enabling high beam currents for electron probe systems.

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Area of Science:

  • Materials Science
  • Physics
  • Electron Optics

Background:

  • Schottky emitters offer high brightness but suffer from low angular current intensity compared to thermionic cathodes.
  • This limitation restricts their application in systems demanding high beam currents.

Purpose of the Study:

  • To enhance the angular current intensity of Schottky emitters.
  • To overcome the limitations of current Schottky emitter technology for high-beam-current applications.

Main Methods:

  • Investigated two strategies: increasing extraction field and scaling emitter tip radius.
  • Observed tip shape transformation and edge emission under high fields.
  • Exploited the relationship between angular intensity and electron gun focal length, influenced by tip radius.

Main Results:

  • Higher extraction fields led to undesirable emission from facet edges.
  • Scaling the emitter tip radius successfully increased angular current intensity.
  • Achieved high angular current intensity (J(Omega) ≈ 1.5 mA sr⁻¹).

Conclusions:

  • Scaling the emitter tip radius is an effective method to boost Schottky emitter angular intensity.
  • The enhanced emitter achieved microampere beam currents with submicron resolution in electron probe systems.