Related Experiment Video
Updated: Jun 10, 2026

06:57
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Abstract:
Ion implantation was used to create predetermined defect densities to examine photoresponse for optoelectronic switch applications. Ion-damaged germanium shows a significant decrease in photoresponsivity with implant dose, particularly with doses exceeding the critical amorphizing dose (D(c) approximately 1 x 10(14) cm(-2)).
