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Crystal phase engineering in single InAs nanowires.

Kimberly A Dick¹, Claes Thelander, Lars Samuelson

¹Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden. Kimberly.Dick@ftf.lth.se

|August 17, 2010

Summary

Researchers developed a new method for precisely controlling crystal structures in Indium Arsenide (InAs) nanowires. This technique allows for the design of complex structures like quantum dots and superlattices, crucial for future electronic devices.

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Area of Science:

Materials Science
Nanotechnology
Solid-State Physics

Background:

Precise control over crystal phases in III-V nanowires is essential for advanced device applications.
Existing methods focus on defect reduction (twin planes, stacking faults) via diameter, temperature, or impurities.

Purpose of the Study:

To demonstrate an improved method for achieving crystal phase control in single Indium Arsenide (InAs) nanowires.
To design and fabricate nanowires with precisely controlled alternating wurtzite (WZ) and zinc blende (ZB) segments and specific defect structures.

Main Methods:

Fabrication of single InAs nanowires with designed alternating WZ and ZB segments.
Atomic precision placement of twin planes and stacking faults.
Creation of ZB quantum dots within WZ segments acting as electron tunnel barriers.

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Assembly of structural superlattices (polytypic and twin plane).

Main Results:

Successfully designed InAs nanowires with alternating WZ and ZB segments and perfect interfaces.
Demonstrated atomic-level control over the placement of twin planes and stacking faults.
Fabricated designed ZB quantum dots and structural superlattices.
Electrical measurements confirmed the presence of controlled structural quantum dots and their potential for fundamental property investigations.

Conclusions:

The developed method offers precise control over crystal structure variations in InAs nanowires.
This technique enables the creation of complex nanostructures like quantum dots and superlattices with designed electronic properties.
The method is broadly applicable to various III-V nanowire systems for fundamental research and device development.