Related Experiment Video
Updated: Jun 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Optimal design strategies for electrostatic energy storage in quantum multiwell heterostructures
Ilya Grigorenko1, Herschel Rabitz
1Center for Nonlinear Studies, Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA. grigoren@gmail.com
Abstract:
We study physical principles of optimal design of a nanoscale multiwell heterostructure functioning as an electrostatic energy storage device. We performed numerical optimization of the multiwell trapping potential for electrons in the nanostructure with the goal to obtain the maximum possible static polarizability of the system. The response of the heterostructure is modeled microscopically using nonlocal linear response theory within the random phase approximation. Three main design strategies are identified which lead to the maximization of the stored energy. We found that the efficiency of each strategy crucially depends on the temperature and the broadening of electron levels. The stored energy for optimized heterostructures can exceed the nonoptimized ones by a factor of 450. These findings provide a theoretical basis for the development of new nanoscale capacitors with high energy density storage capabilities.
Related Concept Videos
The Electrical Double Layer
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

