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Infrared (IR) Spectroscopy: Overview01:09

Infrared (IR) Spectroscopy: Overview

When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
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Updated: Jun 10, 2026

Femtosecond Laser Filaments for Use in Sub-Diffraction-Limited Imaging and Remote Sensing
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Published on: April 25, 2019

Three-element stressed Ge:Ga photoconductor array for the infrared telescope in space.

N Hiromoto, T Itabe, H Shibai

    Applied Optics
    |August 20, 2010
    PubMed
    Summary

    Researchers developed stressed Germanium:Gallium (Ge:Ga) photoconductor arrays for space telescopes. These detectors show high responsivity and low noise under low-light conditions, crucial for infrared astronomy.

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    10:52

    Direct Imaging of Laser-driven Ultrafast Molecular Rotation

    Published on: February 4, 2017

    Area of Science:

    • Astrophysics and Space Science
    • Materials Science for Detectors

    Background:

    • Infrared astronomy relies on sensitive detectors for low-photon environments.
    • Germanium:Gallium (Ge:Ga) photoconductors are vital for mid-infrared detection.
    • Stressing Ge:Ga detectors can modify their performance characteristics.

    Purpose of the Study:

    • To fabricate and test a stressed Ge:Ga photoconductor array for space applications.
    • To evaluate detector performance under simulated low-photon influx conditions.
    • To investigate the effect of applied stress on Ge:Ga detector properties.

    Main Methods:

    • Fabrication of a three-element stressed Ge:Ga photoconductor array.
    • Experimental testing at 2.0 K under low-photon influx (~10^5 photons/s).
    • Application of stress using a cone-disk spring apparatus.

    Main Results:

    • Cutoff wavelength observed at ~180 micrometers.
    • High responsivity (~100 A/W) and etaG (~1) achieved at 2 Hz chopping frequency.
    • Noise Equivalent Power (NEP) below 5 x 10^-18 W/Hz^1/2 with low-noise amplifiers.

    Conclusions:

    • Stressed Ge:Ga photoconductor arrays are suitable for low-photon infrared space applications.
    • Observed slow transient and nonlinear responses dependent on background photon influx.
    • The etaG time constant showed a dependence on photon influx (proportional to N_ph^(-1/2)).